DatasheetsPDF.com

2N3865

Part Number	2N3865
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 25, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·...
Datasheet	2N3865 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for medium-speed switching and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7.
5 A PC Collector Power Dissipation@TC=25℃ 117 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j...

Similar Datasheet

2N380 PNP Transistor - Motorola
2N3800 DUAL PNP SILICON ANNULAR TRANSISTORS - Motorola
2N3800A DUAL PNP SILICON ANNULAR TRANSISTORS - Motorola
2N3800DCSM Dual Bipolar PNP Devices - Semelab Plc
2N3801 DUAL PNP SILICON ANNULAR TRANSISTORS - Motorola
2N3801A DUAL PNP SILICON ANNULAR TRANSISTORS - Motorola
2N3801DCSM Dual Bipolar PNP Devices - Semelab Plc
2N3802 DUAL PNP SILICON ANNULAR TRANSISTORS - Motorola
2N3802A DUAL PNP SILICON ANNULAR TRANSISTORS - Motorola
2N3802DCSM Dual Bipolar PNP Devices - Semelab Plc

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)