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BUW11F

Part Number	BUW11F
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 24, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for rob...
Datasheet	BUW11F PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current 2 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 32 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTE...

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