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BU2527DF

Part Number	BU2527DF
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 24, 2020
Detailed Description	isc Silicon NPN Power Transistor BU2527DF DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode ·Mi...
Datasheet	BU2527DF PDF File

Overview

isc Silicon NPN Power Transistor BU2527DF DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.
5 V IC Collector Current-Continuous 12 A ICM Collector Current-peak 30 A IB Base Current-Continuous 8 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 45 W 150 ...

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