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BU2508D

Part Number	BU2508D
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 24, 2020
Detailed Description	isc Silicon NPN Power Transistor BU2508D DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·H...
Datasheet	BU2508D PDF File

Overview

isc Silicon NPN Power Transistor BU2508D DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.
5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak IB Base Current- Continuous IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ ...

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