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BU1706A

Part Number	BU1706A
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 24, 2020
Detailed Description	isc Silicon NPN Power Transistor BU1706A DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variation...
Datasheet	BU1706A PDF File

Overview

isc Silicon NPN Power Transistor BU1706A DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high frequency electronic lighting ballast applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCESM Collector-Emitter Voltage VBE= 0 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 12 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 3 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 100 W 150 ℃ Tstg Storage Temp...

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