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BU1506DX

Part Number	BU1506DX
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 24, 2020
Detailed Description	isc Silicon NPN Power Transistor BU1506DX DESCRIPTION ·High Voltage ·High Speed Switching ·Built-in Damper Diode ·Mini...
Datasheet	BU1506DX PDF File

Overview

isc Silicon NPN Power Transistor BU1506DX DESCRIPTION ·High Voltage ·High Speed Switching ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Base Voltage VBE= 0 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.
5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 3 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 8 A 32 W 150 ℃ T...

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