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BU921

Part Number	BU921
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 24, 2020
Detailed Description	isc Silicon NPN Power Transistor BU921 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·Min...
Datasheet	BU921 PDF File

Overview

isc Silicon NPN Power Transistor BU921 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for automotive ignition applications and inverter circuits for motor control.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 10 A ICM Collector Current-peak 15 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 120 W 150 ℃ Tstg Storage Temperature Range -6...

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