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BU500

Part Number	BU500
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 23, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage-VCEX= 1500V(Min.) ·Low Collector Saturation Voltage- : VCE(s...
Datasheet	BU500 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage-VCEX= 1500V(Min.
) ·Low Collector Saturation Voltage- : VCE(sat)= 1.
0V(Max.
)@ IC= 4.
5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCEX Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 16 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature ...

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