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BU208

Part Number	BU208
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 23, 2020
Detailed Description	isc Silicon NPN Power Transistor BU208 DESCRIPTION ·High Voltage-VCEX= 1300V(Min.) ·Collector Current- IC = 5.0A ·Mini...
Datasheet	BU208 PDF File

Overview

isc Silicon NPN Power Transistor BU208 DESCRIPTION ·High Voltage-VCEX= 1300V(Min.
) ·Collector Current- IC = 5.
0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5.
0 A ICM Collector Current-Peak 7.
5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 2.
5 A 55 W 115 ℃ Tstg Storage Temperature -65~115 ℃ THERMA...

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