DatasheetsPDF.com

BU133

Part Number	BU133
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 23, 2020
Detailed Description	isc Silicon NPN Power Transistor BU133 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min.) ·Col...
Datasheet	BU133 PDF File

Overview

isc Silicon NPN Power Transistor BU133 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min.
) ·Collector Saturation Voltage- : VCE(sat)= 1.
5V(Max.
)@ IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in color TV receiver’s chopper supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 750 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC= 50℃ TJ Junction Temperature 3 A 30 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERIST...

Similar Datasheet

BU100 Silicon NPN Power Transistors - Inchange Semiconductor
BU1006 Enhanced PowerBridge Rectifiers - Vishay Siliconix
BU1006-E3 Bridge Rectifiers - Vishay
BU1006-M3 Bridge Rectifiers - Vishay
BU1006A Enhanced PowerBridge Rectifiers - Vishay Siliconix
BU1006A-E3 Bridge Rectifiers - Vishay
BU1008 Enhanced PowerBridge Rectifiers - Vishay Siliconix
BU1008-E3 Bridge Rectifiers - Vishay
BU1008-M3 Bridge Rectifiers - Vishay
BU1008A Enhanced PowerBridge Rectifiers - Vishay Siliconix

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)