NPN Transistor - INCHANGE
Description
isc Silicon NPN Power Transistor
BD955
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·DC Current Gain-
: hFE= 40(Min)@ IC= 500mA ·Complement to Type BD956 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
8
A
40
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.
12 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W
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isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.
2A
VBE(on) Base-Emitter On Voltage
IC= 2A; VCE= 4V
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
VCB= 120V; IE= 0
VCB= 60V; IE= 0,TJ=150℃ VCE= 60V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 500mA ; VCE= 4V
hFE-2
DC Current Gain
IC= 2A ; VCE= 4V
fT
Current-Gain—Bandwidth Product
IC= 500mA ; VCE= 4V
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= 1.
0A; IB1= -IB2= 0.
1A; VCC= 20V; RL= 20Ω
BD955
MIN TYP.
MAX UNIT
120
V
120
V
5
V
1.
0
V
1.
4
V
50 μA
1.
0 mA
0.
1 mA
0.
2 mA
40
20
3
MHz
0.
3
μs
1.
5
μs
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