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BD949

Part Number	BD949
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 22, 2020
Detailed Description	isc Silicon NPN Power Transistor BD949 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Curr...
Datasheet	BD949 PDF File

Overview

isc Silicon NPN Power Transistor BD949 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 500mA ·Complement to Type BD950 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 40 W 150 ℃ Tstg Storage Temperature Ra...

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