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BD311

Part Number	BD311
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 22, 2020
Detailed Description	isc Silicon NPN Power Transistor BD311 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = ...
Datasheet	BD311 PDF File

Overview

isc Silicon NPN Power Transistor BD311 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.
)@IC = 5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
0 V(Max)@ IC = 5A ·Complement to Type BD312 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high quality amplifiers operating up to 60 watts into 4 ohm load.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 4 A PC Collector...

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