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BD250C

Part Number	BD250C
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 22, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Collector Current -IC= -25A ·Collector-Emitter Breakdown Voltage- : V(BR)...
Datasheet	BD250C PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Collector Current -IC= -25A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD250; -60V(Min)- BD250A -80V(Min)- BD250B; -100V(Min)- BD250C ·Complement to Type BD249/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD250 -55 VCER Collector-Emitter Voltage (RBE= 100Ω) BD250A BD250B -70 -90 BD250C -115 BD250 -45 VCEO Collector-Emitter Voltage BD250A -60 BD250B -80 BD250C -100 VEBO Emitter-Base Voltage -5 IC Collector Curre...

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