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BD142

Part Number	BD142
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 22, 2020
Detailed Description	isc Silicon NPN Power Transistor BD142 DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation ·Minimum ...
Datasheet	BD142 PDF File

Overview

isc Silicon NPN Power Transistor BD142 DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·LF large signal power amplification.
·Intended for a wide variety of intermediate power applications.
·Suited for use in audio and inverter circuits at 12V.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 117 W TJ Junction Temperature 200 ℃ Tstg Stor...

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