isc
Silicon NPN Darlington
Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation
Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain
: hFE= 1000(Min) @ IC= 3A, VCE= 3V ·Minimu...