DatasheetsPDF.com

2SD2083

Part Number	2SD2083
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.)@ IC= 12A, VCE= 4V ·High...
Datasheet	2SD2083 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.
)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Complement to Type 2SB1383 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver of solenoid, motor and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 40 A IB Base Current- Continuous PC Collector Power Dissipation @TC=...

Similar Datasheet

2SD200 NPN Transistor - INCHANGE
2SD200 SILICON POWER TRANSISTOR - SavantIC
2SD2000 Silicon NPN Transistor - Panasonic Semiconductor
2SD2000 SILICON POWER TRANSISTOR - SavantIC
2SD2000 NPN Transistor - INCHANGE
2SD2001 NPN Transistor - INCHANGE
2SD2005 NPN Transistor - ROHM
2SD2006 NPN Transistor - Rohm
2SD2008 1.2W PACKAGE POWER TRANSISTOR - Rohm
2SD2009 NPN Transistor - ROHM

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)