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2SD1985

Part Number	2SD1985
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Good Linearit...
Datasheet	2SD1985 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.
) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 1.
2V(Max,)@ IC= 3A ·Complement to Type 2SB1393 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1985 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1985 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.
375A 1.
2 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V 1.
8 V ICES Collector Cutoff Current VCE= 60V; VBE= 0 200 μA ICEO Collector Cutoff Current VCE= 30V; IB= 0 300 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1 mA hFE-1 DC Current Gain IC= 1A; VCE= 4V 70 250 hFE-2 DC Current Gain IC= 3A; VCE= 4V 10 fT Current-Gain—Bandwidth Product IC= 0.
1A; VCE= 5 V; f= 1MHz 30 MHz Switching Times ton Turn-on Time 0.
5 μs tstg Storage Time VCC= 50V, IC= 1A; IB1= IB2= 0.
1A, 2.
5 μs tf Fall Time 0.
4 μs  hFE-1 Classifications Q P 70-150 120-250 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general elect...

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