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2SD1941

Part Number	2SD1941
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Power Transistor 2SD1941 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Spee...
Datasheet	2SD1941 PDF File

Overview

isc Silicon NPN Power Transistor 2SD1941 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for CTV/character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 650 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 6 A IC(peak) Collector Current- Peak 7 A IC(surge) Collector Current-Surge PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 50 W 150 ℃ Tstg Stor...

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