DatasheetsPDF.com

2SD1785

INCHANGE
Part Number 2SD1785
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 21, 2020
Detailed Description isc Silicon NPN Darlington Power Transistor 2SD1785 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V...
Datasheet PDF File 2SD1785 PDF File

2SD1785
2SD1785

Overview
isc Silicon NPN Darlington Power Transistor 2SD1785 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
5V(Max) @IC= 2A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 2V ·Complement to Type 2SB1258 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Driver for solenoid, relay and motor, series regulator, and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)