DatasheetsPDF.com

2SD1765

Part Number	2SD1765
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor 2SD1765 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V...
Datasheet	2SD1765 PDF File

Overview

isc Silicon NPN Darlington Power Transistor 2SD1765 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
5V(Max.
) @IC= 1A ·High DC Current Gain : hFE= 1000(Min.
) @ IC= 1A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC C...

Similar Datasheet

2SD1700 NPN SILICON TRANSISTOR - NEC
2SD1701 NPN SILICON TRANSISTOR - NEC
2SD1702 NPN Transistor - NEC
2SD1705 Silicon NPN Transistor - Panasonic Semiconductor
2SD1705 NPN Transistor - INCHANGE
2SD1706 Silicon NPN Power Transistor - Inchange Semiconductor
2SD1707 Silicon NPN Transistor - Panasonic Semiconductor
2SD1707 NPN Transistor - INCHANGE
2SD1709 Silicon NPN Power Transistor - Inchange Semiconductor
2SD1710 NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)