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2SD1548

Part Number	2SD1548
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1400V (Min) ·High Switching Speed ·Low Sa...
Datasheet	2SD1548 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1400V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal output applications.
·Switching regulator output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 10 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1548 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A VBE(sat) Base-Emitter Satur...

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