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2SD1441

Part Number	2SD1441
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Power Transistor 2SD1441 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Spee...
Datasheet	2SD1441 PDF File

Overview

isc Silicon NPN Power Transistor 2SD1441 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 4 A ICP Collector Current-Peak 15 A IBP Base Current-Peak Collector Power Dissipation @ Ta= 25℃ PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 3.
5 A 2.
5 ...

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