Part Number | 2SD1439 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·High Voltage ·High Switching Speed ·Built-in damper diode ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performan... |
Features |
EBO Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.75A
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.75A
1.5
V
hFE
DC Current Gain
IC= 2A ; VCE= 10V
4
12
...
|
Published | Sep 21, 2020 |
Datasheet | 2SD1439 PDF File |