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2SD1426

Part Number	2SD1426
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Built-in damper diode ·Low ...
Datasheet	2SD1426 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Built-in damper diode ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.
5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1.
0 A 80 W 150 ℃ Tstg Storage Temperature Range -55-150 ℃ TH...

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