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2SD1313

Part Number	2SD1313
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Power Transistor 2SD1313 DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage...
Datasheet	2SD1313 PDF File

Overview

...- : V(BR)CEO= 350V(Min) ·High Speed Switching ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications.
·High power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 25 A ICM Collector Current-Pulse 35 A IB Base Current-Continuous 10 A IBM Base Current- Pulse us PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 200 W 150 ℃ Tstg Storage Temperature Range -55~...

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