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2SD1229

Part Number	2SD1229
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor 2SD1229 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.)@ IC= 5A, VCE= ...
Datasheet	2SD1229 PDF File

Overview

isc Silicon NPN Darlington Power Transistor 2SD1229 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.
)@ IC= 5A, VCE= 2V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min.
) ·Complement to Type 2SB912 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC C...

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