NPN Transistor - INCHANGE
Description
isc Silicon NPN Power Transistor
2SD1213
DESCRIPTION ·High Collector Current:: IC= 20A ·Low Collector Saturation Voltage
: VCE(sat)= 0.
4V(Max)@IC= 8A ·Complement to Type 2SB904 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for large current switching of relay drivers,
high-speed inverters,converters applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃
TJ
Junction Temperature
30
A
60 W
2.
5
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.
4A
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 2V
hFE-2
DC Current Gain
IC= 10A; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
RL= 1Ω, VCC= 10V IC= 10A; IB1= IB2= 0.
5A
hFE-1 Classifications
Q
R
S
70-140 100-200 140-280
2SD1213
MIN TYP.
MAX UNIT
30
V
60
V
6
V
0.
4
V
0.
1 mA
0.
1 mA
70
280
30
120
MHz
0.
3
μs
0.
6
μs
0.
02
μs
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended fo...
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