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2SD1196

Part Number	2SD1196
Manufacturer	INCHANGE
Title	NPN Transistor
Description	·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @...
Features	5℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE...
Published	Sep 21, 2020
Datasheet	2SD1196 PDF File

Features

5℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 8mA V...

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