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2SD1047

Part Number	2SD1047
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Power Transistor 2SD1047 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good...
Datasheet	2SD1047 PDF File

Overview

isc Silicon NPN Power Transistor 2SD1047 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB817 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Recommend for 60W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Tempera...

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