DatasheetsPDF.com

2SD1025

Part Number	2SD1025
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor 2SD1025 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 20...
Datasheet	2SD1025 PDF File

Overview

isc Silicon NPN Darlington Power Transistor 2SD1025 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 5A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpoe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A IB Base Current-Continuous 0.
5 A IBM Base Current-Peak PC Collector Power Dissipation @ ...

Similar Datasheet

2SD1000 NPN TRANSISTOR - NEC
2SD1000 NPN Silicon Epitaxial Transistor - Kexin
2SD1001 NPN TRANSISTOR - NEC
2SD1001 NPN Silicon Epitaxial Transistor - Kexin
2SD1005 NPN SILICON EPITAXIAL TRANSISTOR - GME
2SD1005 GENERAL PURPOSE TRANSISTOR - HOTTECH
2SD1005 NPN TRANSISTOR - NEC
2SD1005 NPN Silicon Epitaxial Transistor - Kexin
2SD1005 NPN Plastic Encapsulated Transistor - SeCoS
2SD1005-U NPN Silicon Power Transistors - MCC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)