DatasheetsPDF.com

2SD953

Part Number	2SD953
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Vol...
Datasheet	2SD953 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Voltage- : VCE(sat)= 5.
0V(Max.
)@ IC= 4.
5A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line-operated horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A ICP Collector Current- Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 7 A 95 W 130 ℃ Tstg S...

Similar Datasheet

2SD90 NPN Transistor - ETC
2SD900 NPN Transistor - INCHANGE
2SD900B Silicon NPN Transistor - ETC
2SD904 NPN Transistor - INCHANGE
2SD905 Silicon NPN Transistor - ETC
2SD905 SILICON POWER TRANSISTOR - SavantIC
2SD907 NPN Transistor - INCHANGE
2SD909 NPN Transistor - INCHANGE
2SD91 NPN Transistor - ETC
2SD911 NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)