isc
Silicon NPN
Power Transistor
DESCRIPTION ·High Breakdown
Voltage-
: VCBO= 1500V (Min) ·High
Switching Speed ·Low Collector Saturation
Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 4A ·Minimum Lot-to-Lot variations for robust device
performance and reliab...