DatasheetsPDF.com

2SD799

Part Number	2SD799
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min.) ·...
Datasheet	2SD799 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min.
) ·High DC Current Gain : hFE= 600(Min.
) @IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Igniter applications.
·High voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~1...

Similar Datasheet

2SD700 NPN Transistor - Toshiba
2SD703A Power Transistors - Mospec Semiconductor
2SD705 NPN Transistor - INCHANGE
2SD706 NPN Transistor - INCHANGE
2SD711 NPN Power Transistor - Fuji
2SD711 NPN Transistor - INCHANGE
2SD715 NPN Transistor - INCHANGE
2SD716 NPN Transistor - Toshiba
2SD716 SILICON POWER TRANSISTOR - SavantIC
2SD716 NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)