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2SD613

Part Number	2SD613
Manufacturer	INCHANGE
Title	NPN Transistor
Description	·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 85V(Min) ·Complement to Type 2SB633 ·Minimum Lot-t...
Features	R)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VB...
Published	Sep 21, 2020
Datasheet	2SD613 PDF File

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Features

R)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB...

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