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2SD381

Part Number	2SD381
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min.) ·Complement ...
Datasheet	2SD381 PDF File

Overview

isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min.
) ·Complement to Type 2SB536 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier, low speed switching.
·Suitable for driver of 60~100 watts audio amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.
5 A ICM Collector Current-Peak 3.
0 A IB Base Current 0.
3 A Collector Power Dissipation@TC=25℃ 20 PC W Collector Power Dissipation@...

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