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2SC3970

INCHANGE
Part Number 2SC3970
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 21, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) ·Wide Area of Sa...
Datasheet PDF File 2SC3970 PDF File

2SC3970
2SC3970

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.
) ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCES Collector-Emitter Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 1.
5 A ICM Collector Current-Peak 3 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.
5 A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3970 · isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3970 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMET...


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