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2SC3944

Part Number	2SC3944
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Power Transistor 2SC3944 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ...
Datasheet	2SC3944 PDF File

Overview

isc Silicon NPN Power Transistor 2SC3944 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1535 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For low frequency driver and high power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.
5 A 15 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3944 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=...

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