2SC3557 Datasheet

2SC3557 NPN Transistor

·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applicatio.

Features

BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A ICBO Collector Cutoff Current VCB= 80V; IE= 0 ICEO Collector Cutoff Current VCE= 80V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 0.2A ; VCE= 1V 2SC3557 MIN TYP. MAX UNIT 80 V 5 V 1.0 V 1.5 V 100 μA 0.5 mA 100 μA 100 Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herei.