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2SC3346

Part Number	2SC3346
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 20, 2020
Detailed Description	isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC=6A ·High Spee...
Datasheet	2SC3346 PDF File

Overview

isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.
4V(Max)@ IC=6A ·High Speed Switching Time : tstg= 1.
0μs ·Complement to Type 2SA1329 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ...

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