DatasheetsPDF.com

2SC3300

Part Number	2SC3300
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 20, 2020
Detailed Description	isc Silicon NPN Power Transistor 2SC3300 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low C...
Datasheet	2SC3300 PDF File

Overview

isc Silicon NPN Power Transistor 2SC3300 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.
5V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 15 V IC Collector Current-Continuous 15 A ICP Collector Current-Peak 25 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collec...

Similar Datasheet

2SC3300 NPN Transistor - INCHANGE
2SC3300 SILICON POWER TRANSISTOR - SavantIC
2SC3302 Silicon NPN Transistor - Toshiba Semiconductor
2SC3303 NPN Epitaxial Planar Silicon Transistor - SeCoS
2SC3303 SILICON NPN TRANSISTOR - Toshiba Semiconductor
2SC3303 Silicon NPN Transistor - GME
2SC3303 Silicon NPN Power Transistor - Inchange Semiconductor
2SC3306 NPN Transistor - Toshiba Semiconductor
2SC3306 NPN Transistor - INCHANGE
2SC3306 SILICON POWER TRANSISTOR - SavantIC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)