NPN Transistor - INCHANGE
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 230V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1295 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
230
V
VCEO
Collector-Emitter Voltage
230
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
17
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
5
A
200
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3264
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
2SC3264
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.
5A
ICBO
Collector Cutoff Current
VCB= 230V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 5A; VCE= 4V
COB
Output Capacitance
IE= 0; VCB= 10V;ftest= 1.
0MHz
fT
Current-Gain—Bandwidth Product
IE= -2A; VCE= 12V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 5A ,RL= 12Ω, IB1= -IB2= 0.
5A,VCC= 60V
MIN TYP.
MAX UNIT
230
V
2.
0
V
100 μA
100 μA
50
140
250
pF
30
MHz
0.
3
μs
2.
4
μs
0.
5
μs
hFE Classifications
O
Y
50-100 70-140
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous en...
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