DatasheetsPDF.com

2SC3144

Part Number	2SC3144
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 19, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Hig...
Datasheet	2SC3144 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 1.
5A ·Wide Area of Safe Operation ·Complement to Type 2SA1258 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed drivers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junct...

Similar Datasheet

2SC3101 NPN EPITAXIAL PLANAR TYPE TRANSISTOR - Mitsubishi Electric Semiconductor
2SC3102 NPN EPITAXIAL PLANAR TYPE TRANSISTOR - Mitsubishi Electric Semiconductor
2SC3103 NPN EPITAXIAL PLANAR TYPE TRANSISTOR - Mitsubishi Electric Semiconductor
2SC3104 NPN EPITAXIAL PLANAR TYPE TRANSISTOR - Mitsubishi Electric Semiconductor
2SC3105 NPN EPITAXIAL PLANAR TYPE TRANSISTOR - Mitsubishi Electric Semiconductor
2SC3110 Silicon Power Transistor - Inchange
2SC3112 TRANSISTOR - Toshiba Semiconductor
2SC3113 Silicon NPN Transistor - Toshiba Semiconductor
2SC3114 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SC3116 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)