NPN Transistor - INCHANGE
Description
isc Silicon NPN Power Transistor
2SC3055
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(sus)= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·Motor controls ·Ultrasonic generators ·Class C and D amplifiers ·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
450
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
4
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1
A
15
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.
5A; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1 mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.
5A; IB= 0.
1A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 0.
5A; IB= 0.
1A
VCB= 400V; IE= 0 VCB= 400V; IE= 0; TC= 100℃
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 0.
1A; VCE= 5V
hFE-2
DC Current Gain
IC= 0.
5A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.
2A; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.
0MHz
2SC3055
MIN TYP.
MAX UNIT
400
V
450
V
7
V
1.
0
V
1.
2
V
10 500
μA
10 μA
20
80
10
28
MHz
25
pF
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in gener...
Similar Datasheet
