NPN Transistor - INCHANGE
Description
isc Silicon NPN Power Transistor
2SC3047
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
850
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base voltage
10
V
IC
Collector Current-Continuous
6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
2
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 3.
0 ℃/W
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isc Silicon NPN Power Transistor
2SC3047
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.
4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.
4A
ICBO
Collector Cutoff Current
VCB= 850V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
hFE
DC Current Gain
IC= 0.
5A; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 1A, IB1= 0.
1A; IB2= -0.
2A; RL= 300Ω;PW= 20μs Duty Cycle≤2%
MIN TYP.
MAX UNIT
500
V
850
V
7
V
0.
5
V
1.
2
V
1.
0 mA
1.
0 mA
15
1.
0 μs 3.
0 μs 1.
0 μs
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general el...
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