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2SC2914

Part Number	2SC2914
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 19, 2020
Detailed Description	isc Silicon NPN Power Transistor 2SC2914 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min)...
Datasheet	2SC2914 PDF File

Overview

isc Silicon NPN Power Transistor 2SC2914 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 120 W 150 ℃ Tstg Storage Tempe...

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