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2SC2834

Part Number	2SC2834
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 19, 2020
Detailed Description	isc Silicon NPN Power Transistor 2SC2834 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 800V(Min) ·High Switching Sp...
Datasheet	2SC2834 PDF File

Overview

isc Silicon NPN Power Transistor 2SC2834 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 800V(Min) ·High Switching Speed ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Tempera...

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