NPN Transistor - INCHANGE
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 150V (Min) ·Large Collector Power Dissipation ·Complement to Type 2SA1133 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier and TV vertical deflection
output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
3
A
PC
Collector Power Dissipation
30
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC2660
isc website：www.
iscsemi.
com
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isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 500μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 500μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 400mA; VCE= 10V
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 150mA; VCE= 10V
hFE-2
DC Current Gain
IC= 400mA; VCE= 10V
2SC2660
MIN TYP.
MAX UNIT
150
V
200
V
6
V
1.
0
V
1.
0
V
50
μA
50
μA
60
240
50
hFE-1 Classifications
Q
P
60-140 100-240
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous...
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