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2SC2626

INCHANGE
Part Number 2SC2626
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 19, 2020
Detailed Description isc Silicon NPN Power Transistor 2SC2626 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ...
Datasheet PDF File 2SC2626 PDF File

2SC2626
2SC2626

Overview
isc Silicon NPN Power Transistor 2SC2626 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VCEO(SUS) Collector-Emitter Voltage 300 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
55 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2626 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 300 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 300 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.
1mA ; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.
2A 1.
2 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.
2A 1.
5 V ICBO Collector Cutoff Current VCB= 400V ; IE=0 1.
0 mA IEBO Emitter Cutoff Current VEB= 7V; IC=0 0.
1 mA hFE DC Current Gain IC= 6A; VCE= 5V 10 Switching times ton Turn-on Time tstg Storage Time IC= 10A , IB1= -IB2= 2A RL= 20Ω;PW=20μs Duty Cycle≤2% 0.
8 μs 2.
0 μs tf Fall Time 0.
8 μs Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is ...


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