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Part Number
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2SC2564 |
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Manufacturer
|
INCHANGE |
|
Description
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NPN Transistor |
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Datasheet
|
 2SC2564 PDF File
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Overview
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1094 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
140
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
IE
Emitter Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-12
A
120
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC2564
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.
5 A
VBE
Base-Emitter Voltage
IC= 5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 140V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V;ftest= 1.
0MHz
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V
hFE-1 Classifications
R
O
Y
55-110 80-160 120-240
2SC2564
MIN TYP.
MAX UNIT
140
V
5
V
2.
0
V
2.
0
V
50 μA
50 μA
55
240
30
130
pF
90
MHz
isc website：www.
iscsemi.
com
2 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
2SC2564
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
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